2006. 2. 20 1/7 semiconductor technical data khb7d0n65p1/f1 n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features v dss =650v, i d =7a drain-source on resistance : r ds(on) =1.4 @v gs =10v qg(typ.)= 32nc maximum rating (tc=25 ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb7d0n65p1 KHB7D0N65F1 drain-source voltage v dss 650 v gate-source voltage v gss 30 v drain current @t c =25 i d 7 7* a @t c =100 4.2 4.2* pulsed (note1) i dp 28 28* single pulsed avalanche energy (note 2) e as 212 mj repetitive avalanche energy (note 1) e ar 1.6 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 160 52 w derate above 25 1.28 0.42 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 0.78 2.4 /w thermal resistance, case-to-sink r thcs 0.5 - /w thermal resistance, junction-to-ambient r thja 62.5 62.5 /w dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 123 dim millimeters to-220is a a b b c c d d e e f f g g h h 1.47 max 13.0 max j j k k l l m mm n n o o p q q 123 1. gate 2. drain 3. source 3.18 0.1 + _ 0.8 0.1 + _ 3.3 0.1 + _ 0.5 0.1 + _ 10.16 0.2 + _ 15.87 0.2 + _ 12.57 0.2 + _ 2.54 0.2 + _ 2.54 0.2 + _ 2.76 0.2 + _ 6.68 0.2 + _ 4.7 0.2 + _ 3.23 0.1 + _ 6.5 p
2006. 2. 20 2/7 khb7d0n65p1/f1 revision no : 1 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 650 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.8 - v/ drain cut-off current i dss v ds =650v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2 - 4 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =3.75a - 1.2 1.4 dynamic total gate charge q g v ds =520v, i d =7.0a v gs =10v (note4,5) - 32 40 nc gate-source charge q gs - 5.4 - gate-drain charge q gd - 12.6 - turn-on delay time t d(on) v dd =325v r l =46 r g =25 (note4,5) - 20 45 ns turn-on rise time t r - 40 90 turn-off delay time t d(off) - 125 260 turn-off fall time t f - 80 170 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1310 1700 pf reverse transfer capacitance c rss - 113 147 output capacitance c oss - 11.4 14.8 source-drain diode ratings continuous source current i s v gs 2006. 2. 20 3/7 khb7d0n65p1/f1 revision no : 1 normalized breakdown voltage bv dss gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 1 10 -1 10 0 10 1 10 0 10 -1 10 1 68 410 2 i d - v gs bv dss - t j r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.2 0.4 0.8 1.0 2.0 1.2 0.6 1.4 1.8 1.6 reverse drain current i s (a) 3.0 2.5 1.5 1.0 2.0 010 515 junction temperature tj ( ) c source - drain voltage v sd (v) v g = 10v v g = 20v 10 0 10 -1 10 1 r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 3.75a v gs = 0v i ds = 250 150 c 25 c -55 c 2 5 c 15 0 c v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v bottom : 5.0 v
2006. 2. 20 4/7 khb7d0n65p1/f1 revision no : 1 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 28 32 12 4 20 16 24 8 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 500 1500 2000 4500 1000 2500 3500 3000 4000 10 -1 10 0 10 1 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 frequency = 1mhz drain current i d (a) drain - source voltage v ds (v) safe operation area 10 1 10 1 10 -1 10 0 10 0 10 -2 10 2 10 3 0 6 2 4 8 75 150 125 50 100 25 drain current i d (a) (khb7d0n65p1) (KHB7D0N65F1) i d =7a operation in this area is limited by r ds(on) c junction temperature t j ( ) i d - t j operation in this area is limited by r ds(on) v ds = 520v v ds = 325v v ds = 130v c oss c iss c rss t c = 25 t j = 150 single nonrepetitive pulse c c t c = 25 t j = 150 single nonrepetitive pulse c c dc 10 s 10 ms 1ms 100 s dc 10ms 1ms 100 s 100ms
2006. 2. 20 5/7 khb7d0n65p1/f1 revision no : 1 square wave pulse duration (sec) r th 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {khb7d0n65p1} square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {KHB7D0N65F1} normalized transient thermal resistance r th normalized transient thermal resistance - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm sin gle pulse dut y=0 .5 0.02 0.05 0.1 0.2 0.01 duty=0.5 0.02 0.05 0.1 0. 2 0.01 sin gle pulse
2006. 2. 20 6/7 khb7d0n65p1/f1 revision no : 1 - gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 0.5 v dss 0.5 v dss 0.8 v dss
2006. 2. 20 7/7 khb7d0n65p1/f1 revision no : 1 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss
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